Title
Relative Intensity Noise Characteristics In A Frequency Stabilized Modelocked Semiconductor Laser System
Abstract
RIN characteristics in a frequency stabilized MSL were experimentally and theoretically investigated. Average RIN level of less than -150dB/Hz as well as Modal RIN reduction of approximately 3dB were obtained from the frequency stabilized MSL. © 2005 Optical Society of America.
Publication Date
12-1-2006
Publication Title
Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
Number of Pages
-
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/CLEO.2006.4628779
Copyright Status
Unknown
Socpus ID
55649117330 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/55649117330
STARS Citation
Lee, Wangkuen; Choi, Myoung Taek; Izadpanah, Hossein; and Delfyett, Peter J., "Relative Intensity Noise Characteristics In A Frequency Stabilized Modelocked Semiconductor Laser System" (2006). Scopus Export 2000s. 7600.
https://stars.library.ucf.edu/scopus2000/7600