Title

Improved Substrate Current Model For Deep Submicron Mosfets

Abstract

An improved substrate current model for deep submicron MOSFETs, suitable for circuit aging simulation, is developed. The present model predictions are compared with experimental data and the BSIM3V3 model. A good agreement between the present model predictions and experimental data is obtained.

Publication Date

11-1-2000

Publication Title

Solid-State Electronics

Volume

44

Issue

11

Number of Pages

1985-1988

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/S0038-1101(00)00170-2

Socpus ID

0034324047 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0034324047

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