Title
Improved Substrate Current Model For Deep Submicron Cmos Transistors
Abstract
An improved substrate current model, incorporating the drain and gate bias dependent velocity saturation region, was described. The substrate current is used for predicting the lifetime of the devices and circuits, subject to hot carrier stressing. The model was used to simulate the transient substrate current in circuit operating conditions, to predict the device and circuit lifetime.
Publication Date
12-1-2000
Publication Title
International Integrated Reliability Workshop Final Report
Number of Pages
146-148
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
0034429021 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0034429021
STARS Citation
Li, Wei; Yuan, J. S.; and Chetlur, Sundar, "Improved Substrate Current Model For Deep Submicron Cmos Transistors" (2000). Scopus Export 2000s. 738.
https://stars.library.ucf.edu/scopus2000/738