Improved Substrate Current Model For Deep Submicron Mosfets
An improved substrate current model for deep submicron MOSFETs, suitable for circuit aging simulation, is developed. The present model predictions are compared with experimental data and the BSIM3V3 model. A good agreement between the present model predictions and experimental data is obtained.
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Li, Wei; Yuan, Jiann S.; and Chetlur, Sundar, "Improved Substrate Current Model For Deep Submicron Mosfets" (2000). Scopus Export 2000s. 761.