Title

Modeling Short Channel Effect On High-K And Stacked-Gate Mosfets

Abstract

The roll-off of threshold voltage in deep submicron MOSFETs with high-k and stacked gate dielectrics is studied. A model to account for the fringing field effect on the high-k stacked layer dielectrics is proposed. The model predictions are compared with the two-dimensional device simulation. Good agreement between the model predictions and device simulation results has been obtained.

Publication Date

11-1-2000

Publication Title

Solid-State Electronics

Volume

44

Issue

11

Number of Pages

2089-2091

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/S0038-1101(00)00152-0

Socpus ID

0034320816 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0034320816

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