Modeling Short Channel Effect On High-K And Stacked-Gate Mosfets
The roll-off of threshold voltage in deep submicron MOSFETs with high-k and stacked gate dielectrics is studied. A model to account for the fringing field effect on the high-k stacked layer dielectrics is proposed. The model predictions are compared with the two-dimensional device simulation. Good agreement between the model predictions and device simulation results has been obtained.
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Zhang, J.; Yuan, J. S.; and Ma, Y., "Modeling Short Channel Effect On High-K And Stacked-Gate Mosfets" (2000). Scopus Export 2000s. 763.