Title

Computer-Aided Design Methodology For Electrostatic Discharge (Esd) Protection Applications

Abstract

Physical mechanisms that define the triggering conditions of lateral P 1N1-P2N2 structures for ESD (electrostatic discharge) protection are identified using 2-D numerical simulations. The TCAD (technology computer aided design) allows for accurate prediction of the forward and reverse blocking voltages, necessary for custom ESD protection design. Symmetrical and asymmetrical dual-polarity S-type I-V characteristics are achieved for bipolar input/output ESD protection design. This is realized by using 1) tailored forward-and reverse- blocking junction configurations embedded in coupled (P1N1-P 2N2)//(N2P3-N3P 1) structures, and 2) optimized adjustment of the structures' doping implantations and isolation regions. © 2006 IEEE.

Publication Date

12-1-2006

Publication Title

Proceedings of the Sixth International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2006 - Final Program and Technical Digest

Number of Pages

353-358

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/ICCDCS.2006.250886

Socpus ID

34147098222 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/34147098222

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