Title

Electrostatic Discharge Failure Mechanism In Semiconductor Devices, With Applications To Electrostatic Discharge Measurements Using Transmission Line Pulsing Technique

Abstract

Electrostatic discharge (ESD) is responsible for more than 25% of semiconductor device and chip damage each year. This paper focuses on an ESD event resulting from the charge being transferred from a human body to an integrated circuit (called the human body model, HBM). In particular, the study provides simulation and experimental results to determine the main mechanism governing the failure of MOS devices subjected to the HBM stress. Based on this mechanism, the correct pulse needed to measure the HBM ESD characteristics using the transmission line pulsing technique is also determined and recommended.

Publication Date

10-1-2000

Publication Title

Solid-State Electronics

Volume

44

Issue

10

Number of Pages

1771-1781

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/S0038-1101(00)00122-2

Socpus ID

0034291093 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0034291093

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