Title

Determination Of Gate-Bias Dependent Source/Drain Series Resistance And Effective Channel Length For Advanced Mos Devices

Abstract

In this paper, an improved method for determining the gate-bias dependent source and drain series resistances RD and effective channel length Leff = LM - ΔL (LM is the mask channel length and ΔL is the channel length reduction) of advanced MOS devices is developed for the purpose of providing a better accuracy for the modeling of the current-voltage characteristics of LDD MOSFETs operating from 25 to 120 °C. Our results show that both ΔL and RSD decrease with increasing gate-bias, but increase with increasing temperature. In addition, the gate-bias dependence of ΔL and RSD becomes weaker as the temperature rises. Experimental data obtained from devices fabricated using the 0.14 and 0.09 μm DRAM technologies are included in support of the theoretical work developed. © 2006 Elsevier Ltd. All rights reserved.

Publication Date

11-1-2006

Publication Title

Solid-State Electronics

Volume

50

Issue

11-12

Number of Pages

1774-1779

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.sse.2006.09.005

Socpus ID

33751225406 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/33751225406

This document is currently not available here.

Share

COinS