Title

An Analytical Drain Current Model Of Short-Channel Mosfets Including Source/Drain Resistance Effect

Keywords

Channel length modulation (CLM); Drain current; Drain-induced barier lowering (DIBL); Reverse short channel effect (RSCE); Source/drain parasitic resistance; Velocity saturation

Abstract

In this paper, the DC characteristics of MOSFETs are investigated by means of an analytical approach with considerations of the source/drain parasitic resistance ( R S / R D ). Experimental data of MOS devices for DRAM design and results of TCAD simulation are used to verify the accuracy of theoretical calculation. It is found that both the R S and R D can induce a large reduction in the drain current in the linear region, but only the source resistance can cause a large reduction in the drain current in the saturation region. Moreover, the drain current deduction due to the R S / R D increases with decreasing channel length and oxide thickness.

Publication Date

3-1-2006

Publication Title

International Journal of Electronics

Volume

93

Issue

3

Number of Pages

137-148

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1080/00207210500519505

Socpus ID

33645715664 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/33645715664

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