Title

Conduction-Band Deformation Effect On Stress-Induced Leakage Current

Abstract

An improved model of the stress-induced leakage current including effect of the inelastic trap-assisted tunneling is proposed. The present model accounts for the conduction band deformation effect. The simulation results reveal that the conduction-band deformation effect cannot be neglected when trapped charge density is larger than 1012 cm-2. The model predictions are in good agreement with the experimental data.

Publication Date

9-1-2000

Publication Title

Solid-State Electronics

Volume

44

Issue

9

Number of Pages

1703-1706

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/S0038-1101(00)00093-9

Socpus ID

0034274297 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0034274297

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