Title

Modeling Gate Oxide Breakdown Under Bipolar Stress

Abstract

Closed form analytical equations for time-dependent dielectric breakdown of the gate oxide under bipolar stress is proposed for the first time. The effect of stress frequency, gate current polarity, and temperature on the time to breakdown is accounted for in the proposed hole injection-detrap model. The lifetime improvement with increasing frequency is mainly due to the competition between the hole trapping process at the forward stress field and hole detrapping process at the reverse stress field. The modeling results show good agreement with the experimental data.

Publication Date

9-1-2000

Publication Title

Solid-State Electronics

Volume

44

Issue

9

Number of Pages

1537-1541

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/S0038-1101(00)00129-5

Socpus ID

0034273992 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0034273992

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