Title

Investigation Of Oxygen Annealing Effects On Rf Sputter Deposited Sic Thin Films

Keywords

Oxidation; SiC; XPS

Abstract

Amorphous silicon carbide films were deposited by RF sputtering technique using a SiC target. These films were annealed in dry oxygen ambient in the temperature range of 400-700 °C. Subsequently the films were characterized using X-ray photoelectron spectroscopy (XPS) to investigate the chemical composition at each annealing temperature. XPS indicated that increasing the anneal temperature results in a decrease in SiC phase, and an increase in SiOx. Surface morphology of the oxidized films was characterized using atomic force microscope. Optical absorption studies indicated blue shifting effects as the annealing temperature was increased. © 2006 Elsevier Ltd. All rights reserved.

Publication Date

7-1-2006

Publication Title

Solid-State Electronics

Volume

50

Issue

7-8

Number of Pages

1189-1193

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.sse.2006.06.021

Socpus ID

33747151027 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/33747151027

This document is currently not available here.

Share

COinS