Title

Design And Integration Of Robust Esd Protection In Cmos/Bicmos Technologies

Keywords

Electrostatic discharge; High-Holding; Holding voltage; Latchup; Low-Voltage-Trigger Silicon Controlled Rectifier (HH-LVTSCR); Voltage snapback

Abstract

Robust and novel devices called High Holding, Low-Voltage-Trigger Silicon Controlled Rectifiers (HH-LVTSCRs) for Electrostatic Discharge (ESD) protection of integrated circuits (ICs) are designed, fabricated and characterized. The S-type current-voltage (I-V) characteristics of the HH-LVTSCRs are adjustable to different operating conditions by changing the device dimensions and terminal interconnections. Experimental results demonstrate that HH-LVTSCRs with a multiple-finger layout render high levels of ESD protection per unit area, applicable in the design of ICs with stringent ESD protection requirements of over 15 kV IEC.

Publication Date

9-29-2006

Publication Title

Proceedings - Electrochemical Society

Volume

PV 2006-03

Number of Pages

208-214

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

33748979924 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/33748979924

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