Title

Zncdo/Znmgo And Zno/Algan Heterostructures For Uv And Visible Light Emitters

Abstract

This paper reviews of some of the progress made in the development of ZnO-based light emitting diodes (LEDs). n-ZnO/p-AlGaN-based heterostructures have been successfully for the fabrication of UV emitting LEDs that have operated at temperatures up to 650K, suggesting an excitonic origin for the optical transitions. RF-plasma-assisted molecular beam epitaxy has been used to grow epitaxial Cd xZn 1-xO films on GaN/sapphire structure. These films have a single-crystal wurtzite structure as demonstrated by structural and compositional analysis. High quality Cd xZn 1-xO films were grown with up to x=0.78 mole fraction as determined by RBS and SIMS techniques. Optical emission ranging from purple (Cd 0.05Zn 0.95O) to yellow (Cd 0.29Zn 0.71O) was observed. Compositional fluctuations in a Cd 0.16Zn 0.84O films were not detected by spatially resolved CL measurements, although intensity fluctuation with features of ∼0.5 μm diameter were seen on the intensity maps. Time resolved photoluminescence shows multi-exponential decay with 21 psec. and 49±3 psec. lifetimes, suggesting that composition micro-fluctuations may be present in Cd 0.16Zn 0.84O film. © 2006 Materials Research Society.

Publication Date

8-23-2006

Publication Title

Materials Research Society Symposium Proceedings

Volume

891

Number of Pages

371-379

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

33747346224 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/33747346224

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