Title

Properties Of Cdzno/Zno Heterostructures For Uv Light Emitters

Abstract

In the paper we present band-gap alignment diagrams for type-II/rype-1 heterostructures incorporating the strong piezoelectric and spontaneous polarization fields in ZnCdMgO and AlGaN-based materials and interfaces. The paper describes some of the recent progress made in the development of high quality ZnCdO layers and CdZnO/ZnO heterostructures grown epitaxially by RF-plasma molecular beam epitaxy (MBE). We summarize optical and electrical properties of high quality CdxZn1-xO alloys with Cd mole fraction from 0.02 to 0.78 and discuss phase separation phenomenon, which may be present in ternary alloys. A single-crystal wurtzite structure of CdZnO alloys has been confirmed. We achieved a strong optical emission at RT in the 380 nm to 574 nm spectral range from CdxZn1-xO with various compositions. Dependence of the fundamental optical band gap on the composition of CdxZn1-xO alloys, band gap bowing, and the possible effect of composition micro-fluctuations in ternary CdxZn 1-xO alloys on the optical bandgap is also discussed. Time resolved photoluminescence shows multi-exponential decay with 21 psec. and 49±3 psec. lifetimes, suggesting that composition micro-fluctuations may be present in Cd0.16Zn0.84O film. We also report on crystallographic and optical properties of CdZnO/ZnO multiple quantum wells. copyright The Electrochemical Society.

Publication Date

1-1-2006

Publication Title

ECS Transactions

Volume

3

Issue

5

Number of Pages

323-331

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1149/1.2357221

Socpus ID

33847008105 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/33847008105

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