Title

X-Ray Photoelectron Spectroscopy Analysis Of Oxygen Annealed Radio Frequency Sputter Deposited Sicn Thin Films

Abstract

Thin films of amorphous silicon carbide nitride (a- SiCx Ny) were deposited in a rf magnetron sputtering system using a sintered SiC target. Films with various compositions were deposited onto silicon substrate by changing the N2 Ar gas ratios during sputtering. These films were annealed in dry oxygen ambient in the temperature range of 400-900°C. Subsequently these annealed films were characterized using X-ray photoelectron spectroscopy to investigate the chemical composition and oxidation kinetics at each annealing temperature. The results indicated that the oxidation of films was more gradual for the samples deposited with no nitrogen compared to the ones deposited with nitrogen. © 2006 The Electrochemical Society. All rights reserved.

Publication Date

7-1-2006

Publication Title

Journal of the Electrochemical Society

Volume

153

Issue

7

Number of Pages

-

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1149/1.2198127

Socpus ID

33744785712 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/33744785712

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