Title

Validation Of Bulk-Charge Effect Parameter Extraction In Mosfets

Abstract

Our recently proposed method to extract the bulk-charge effect parameter in MOSFETs is scrutinized by studying SOI devices, a-Si:H TFTs and short- as well as long-channel bulk MOSFETs. The method requires measuring the drain current as a function of gate voltage at two small values of drain voltage chosen in the linear region of opera-tion. © 2000 Elsevier Science Ltd. All rights reserved.

Publication Date

6-1-2000

Publication Title

Microelectronics Reliability

Volume

40

Issue

6

Number of Pages

941-945

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/s0026-2714(99)00274-7

Socpus ID

8744249147 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/8744249147

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