Title

New Simple Procedure To Determine The Threshold Voltage Of Mosfets

Abstract

A new alternative technique is proposed to extract the threshold voltage from the subthreshold-to-strong inversion transition region of MOSFETs. It uses an auxiliary operator that involves integration of the drain current as a function of gate voltage. Tests show that the procedure produces results comparable to conventional methods.

Publication Date

4-1-2000

Publication Title

Solid-State Electronics

Volume

44

Issue

4

Number of Pages

673-675

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/S0038-1101(99)00254-3

Socpus ID

0033897107 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0033897107

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