Title

Optimum Dopant Content Of N-Type 95% Bi2Te3 + 5% Bi2Se3 Compounds Fabricated By Gas Atomization And Extrusion Process

Keywords

Anisotropy; Bi Te semiconductors 2 3; Powder metallurgy; Thermal analysis; X-ray diffraction

Abstract

The n-type (Bi2Te3-Bi2Se3) compound was newly fabricated by gas atomization and hot extrusion, which is considered to be a mass production technique of this alloy. The aim of this research is to analyze the effect of the amount of dopant on the thermoelectric properties for n-type 95% Bi2Te3 + 5% Bi2Se3 compounds. The microstructure of extruded bar shows homogeneous and fine distribution of grains through full length due to dynamic recrystallizaiton during hot extrusion. The absolute values of Seebeck coefficient for the compounds doped 0.02, 0.04, 0.07 and 0.1 wt.% SbI3 are 219.9, 175, 147.7 and 146.7 μV/K, respectively. The electrical resistivity (ρ) is highest at 0.02 wt.% SbI3, while lowest is at 0.1 wt.% SbI3. The compound with 0.04 wt.% SbI3 shows the highest power factor among the four; different dopant contents because of the relative high Seebeck coefficient and the low electrical resistivity. © 2005 Elsevier B.V. All rights reserved.

Publication Date

4-13-2006

Publication Title

Journal of Alloys and Compounds

Volume

414

Issue

1-2

Number of Pages

146-151

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.jallcom.2005.03.115

Socpus ID

33645868620 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/33645868620

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