Title

Diffusion Profiles Of Low Dosages Chromium Ions Implanted Into (1 0 0) Crystalline Silicon

Keywords

Cr; Diffusion; Ion implantation; Si; SIMS

Abstract

Chromium ions with low dosages (1×1012 and 1×1013 cm-2) are implanted into silicon (1 0 0) crystalline substrates. Thermal anneals were carried out at different temperatures between 300 and 1000 °C to study the effects of ion implantation dose on the Cr diffusion profiles. Secondary ion mass spectrometry (SIMS) has been used to characterize the profiles of the Cr impurities. At 1×1012 cm-2 dosage and 500 °C anneal, the diffusivity of Cr in Silicon is determined to be 1.0×10-14 cm2 s-1. © 2006 Elsevier Ltd. All rights reserved.

Publication Date

2-1-2006

Publication Title

Materials Science in Semiconductor Processing

Volume

9

Issue

1-3

Number of Pages

62-65

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.mssp.2006.01.010

Socpus ID

33746787267 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/33746787267

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