Title

Diffusion Behavior Of Implanted Li Ions In Gan Thin Films Studied By Secondary Ion Mass Spectrometry

Keywords

Diffusion; GaN; SIMS

Abstract

Lithium ions with dosages of 2.6×1012, 2.6×1013, 2.6×1014, and 2.6×1015 cm-2 have been implanted into a GaN thin film grown on sapphire substrates. The diffusion behavior of these implanted Li ions in GaN thin film at different temperature anneals was studied using secondary ion mass spectrometry. In general, the diffusion profiles show relatively little movement of Li in the GaN thin film for temperatures up to 700 °C. At low-temperature anneals (<500 °C), up-hill diffusion dominated the Li profiles and at high-temperature anneals (>800 °C), out-diffusion dominated the Li profiles. © 2006 Elsevier Ltd. All rights reserved.

Publication Date

2-1-2006

Publication Title

Materials Science in Semiconductor Processing

Volume

9

Issue

1-3

Number of Pages

375-379

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.mssp.2006.01.020

Socpus ID

33744511602 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/33744511602

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