Title

Characterization Of Oxide Charge Trapping In Ultrathin N2O Oxide Using Direct Tunneling Current

Keywords

Charge trapping; Direct tunneling; Ultrathin oxide

Abstract

This work studies the constant current stressing effects on the ultrathin (1.7-3 nm) oxides prepared by thermal oxidation of silicon in nitric oxide (N2O). A simple process evaluation formula for extracting the stress-induced flatband shift is developed and validated with capacitance-voltage measurements. We find that the flatband degradation does not follow the power law, rather an exponential law with a quasi-saturation region is observed as a result of the slow trap generation rate or the generation of positive charge during the constant current stressing. The sources of trap generation are attributed to the Si-Si bonds, Pb centers, and nitride-related defects due to the over-constrained silicon atoms in the Si3N4 clusters at the interface. © 2005 Elsevier Ltd. All rights reserved.

Publication Date

2-1-2006

Publication Title

Solid-State Electronics

Volume

50

Issue

2

Number of Pages

170-176

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.sse.2005.11.005

Socpus ID

32344445799 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/32344445799

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