Title

On The Reliability Issues Of Rf Cmos Devices

Abstract

Although multi-finger MOS structures have demonstrated very attractive behaviors for high-frequency analog circuit applications, the shared drain and source regions for adjacent gate fingers have led to current crowding and results in the finger number-dependent current-voltage characteristics. In addition, the high current density spots near the drain region would deteriorate the MOS reliability in several aspects. Present results suggest that the common drain regions should be wider and more heavily doped in order to alleviate these effects. © 2006 IEEE.

Publication Date

1-1-2006

Publication Title

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Number of Pages

1105-1108

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/ICSICT.2006.306695

Socpus ID

34547334472 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/34547334472

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