Title

Air-Pressure Effect On Room Temperature Hydrogen Sensitivity Of Semiconductor Tin Oxide-Based Thin Film Micro-Sensor

Abstract

Nanocrystalline indium oxide (In 2O 3)-doped tin oxide (SnO 2) thin film sensor has been sol-gel dip-coated on a microelectrochemical system (MEMS) device. Hydrogen (H 2) at ppm-level has been successfully detected at room temperature using the present MEMS-based sensor. The room temperature H 2 sensitivity of the present MEMS-based sensor has been investigated as a function of air-pressure (50-600 Torr) with and without the ultraviolet (UV) radiation exposure. It has been demonstrated that, the concentration of the surface-adsorbed oxygen-ions (which is related to the sensor-resistance in air), the ppm-level H 2, and the oxygen (O 2) partial pressure are the three major factors, which determine the variation in the room temperature H 2 sensitivity of the present micro-sensor as a function of air-pressure. Copyright © 2006 ASM International®.

Publication Date

5-1-2006

Publication Title

Surface Engineering - Proceedings of the 4th International Surface Engineering Conference

Volume

2005

Number of Pages

207-213

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

33646000276 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/33646000276

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