Title

Laser-Patterned Blue-Green Sic Led

Abstract

The primary aim of this work is to fabricate silicon carbide (SiC) blue green light emitting diodes (LEDs) using novel laser doping technique. 6H:SiC (n-type) wafer samples and a Nd:YAG laser (1064nm wavelength) was used for fabrication of these LED's. The doped structures were characterized for I-V characteristics, C-V characteristics and electroluminescence. Electroluminescence (EL) spectrum of the doped sample showed the output in the blue green (507.27nm) wavelength range, characterizing the p-n junction formed. © 2006 Materials Research Society.

Publication Date

1-1-2006

Publication Title

Materials Research Society Symposium Proceedings

Volume

911

Number of Pages

455-460

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1557/proc-0911-b10-01

Socpus ID

33750318098 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/33750318098

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