Title
Laser-Patterned Blue-Green Sic Led
Abstract
The primary aim of this work is to fabricate silicon carbide (SiC) blue green light emitting diodes (LEDs) using novel laser doping technique. 6H:SiC (n-type) wafer samples and a Nd:YAG laser (1064nm wavelength) was used for fabrication of these LED's. The doped structures were characterized for I-V characteristics, C-V characteristics and electroluminescence. Electroluminescence (EL) spectrum of the doped sample showed the output in the blue green (507.27nm) wavelength range, characterizing the p-n junction formed. © 2006 Materials Research Society.
Publication Date
1-1-2006
Publication Title
Materials Research Society Symposium Proceedings
Volume
911
Number of Pages
455-460
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1557/proc-0911-b10-01
Copyright Status
Unknown
Socpus ID
33750318098 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/33750318098
STARS Citation
Bet, Sachin M.; Quick, Nathaniel R.; and Kar, Aravinda, "Laser-Patterned Blue-Green Sic Led" (2006). Scopus Export 2000s. 9136.
https://stars.library.ucf.edu/scopus2000/9136