Title
Diffusion Profiles And Magnetic Properties Of Mn-Implanted Silicon After Thermal Annealing
Abstract
Re-distribution of Mn atoms implanted into Czochralski silicon (CzSi:Mn) and floating zone silicon (FzSi:MN) after thermal annealing between 300 and 1,000 °C have been investigated by secondary ion mass spectroscopic technique. The motivation behind our study comes from recent report of strong magnetic ordering up to 400 K of Mn implanted silicon samples reported by Bolduc et al. (Phys Rev B 71:033302, 2005). Our silicon substrates were implanted with 160 keV Mn + ion to a dose of 1 × 10 16 cm -2 at either room temperature or at 340 °C. The Mn profiles after annealing above 900 °C showed multiple concentration peaks for the 340 °C implanted samples, but not for the samples implanted at room temperature. We also carried out cross sectional TEM and ferromagnetic resonance measurements to correlate the micro-structural and magnetization data with the Mn depth profile obtained by SIMS. © Springer Science+Business Media, LLC 2007.
Publication Date
10-16-2008
Publication Title
Journal of Materials Science: Materials in Electronics
Volume
19
Issue
SUPPL. 1
Number of Pages
-
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1007/s10854-007-9481-4
Copyright Status
Unknown
Socpus ID
53649094442 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/53649094442
STARS Citation
Chow, Lee; Gonzalez, J. C.; Del Barco, E.; Vanfleet, R.; and Misiuk, A., "Diffusion Profiles And Magnetic Properties Of Mn-Implanted Silicon After Thermal Annealing" (2008). Scopus Export 2000s. 9288.
https://stars.library.ucf.edu/scopus2000/9288