Title

Structures And Magnetization Of Defect-Associated Sites In Silicon

Keywords

Ferromagnetic resonance; Ion implantation; Si; Transmission electron microscopy

Abstract

To better understand the mechanism of the reported "quasi- ferromagnetism" observed in Si ions self-implanted or irradiated silicon, we carry out high resolution transmission electron microscopy (HRTEM), magnetization measurements using superconducting quantum interference device (SQUID) magnetometer, and ferromagnetic resonance (FMR) measurements of the magnetic interaction of the defect-associated sites in silicon damaged by silicon self-implantation or energetic particle beams. The SQUID measurements showed that the silicon self-implanted sample has paramagnetic ordering. FMR measurements indicated the He++ irradiated sample has a ferromagnetic interaction and yields a Lande g-factor of 2.35. © 2008 American Institute of Physics.

Publication Date

12-1-2008

Publication Title

AIP Conference Proceedings

Volume

1003

Number of Pages

248-251

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1063/1.2928955

Socpus ID

70450227357 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/70450227357

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