Title

Dynamic Mechanical Analysis (Dma) Of Cmp Pad Materials

Abstract

In the semiconductor industry, there is a need to establish fundamental, mechanism-based, correlation(s) between process conditions, consumables (e.g., pads and slurries), and observed process performance in Chemical-Mechanical Polishing (CMP). In this paper, we present recent results of studies on polyurethane-based CMP pads in static and dynamic conditions using Dynamic Mechanical Analysis (DMA) to monitor modulus and energy damping changes. Two-layered, composite IC1000 on Suba IV pads, [IC1000 (cast and cured polyurethane elastomer)/Suba IV (polyurethane impregnated polyester felt)], were analyzed: prior to use (fresh); after a 24-hr soak in silica-containing oxide slurry (basic); and after oxide polishing (used). Upon comparison it was observed that a characteristic transition feature due to water is present at sub-ambient temperatures in both the slurry soaked and used pads. Exposure of as-received pads to basic oxide slurry results in a broad, high temperature transition thought to be the result of chemical-induced disruption of macrostructural units. Polishing (load-enhanced chemical exposure) introduces further changes to the polymer network represented by an apparent degradation to the structural species responsible for the high temperature transition in Suba IV. © 2000 Materials Research Society.

Publication Date

1-1-2000

Publication Title

Materials Research Society Symposium - Proceedings

Volume

613

Number of Pages

E7.3.1-E7.3.10

Document Type

Article

Personal Identifier

scopus

Socpus ID

85009920676 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85009920676

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