Title

Morphology Control In The Vapor-Liquid-Solid Growth Of Sic Nanowires

Abstract

In this paper, we report a new technique to manipulate and control the morphology of vapor-liquid-solid (VLS) grown SiC nanowires by varying the pressure of the source species. We demonstrate that the diameter of the nanowires is strongly related to the pressure and pressure variation rate of the source species. SiC nanowires with Eiffel-tower shape, spindle shape, and modulated diameters and periods have been synthesized. In principle, the technique is applicable to other material systems. © 2008 American Chemical Society.

Publication Date

11-1-2008

Publication Title

Crystal Growth and Design

Volume

8

Issue

11

Number of Pages

3893-3896

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1021/cg8002756

Socpus ID

61549138380 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/61549138380

This document is currently not available here.

Share

COinS