Title

Overview Of Sige Technology Modeling And Application (Invited Paper)

Abstract

Advances in wireless communications and information processing systems require implementation of very high performance electronic systems. In recent years, SiGe heterojunction bipolar transistors (HBTs) have merged us one of the leading contenders to satisfy these demands. The low emitter-base turn-on voltage and device scaling significantly reduce power consumption in circuit operation, while maintaining high speed. With the increasing demand placed on voice and data communications, transmitting, receiving, and processing information at high frequencies and high speeds, the use of SiGe bipolar transistors becomes increasingly important.

Publication Date

1-1-2000

Publication Title

Proceedings - International Symposium on Quality Electronic Design, ISQED

Volume

2000-January

Number of Pages

67-72

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/ISQED.2000.838856

Socpus ID

4944247263 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/4944247263

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