Title

Growth And Structure Of Epitaxial Ce0.8Sm0.2O1.9 By Oxygen-Plasma-Assisted Molecular Beam Epitaxy

Keywords

A1. Doping; A1. HRTEM; A1. XPS; A1. XRD; A3. Thin films; B1. CeO 2; B1. Sapphire

Abstract

We used oxygen-plasma-assisted molecular beam epitaxy (OPA-MBE) to grow highly oriented Ce0.8Sm0.2O1.9 films on single-crystal c-Al2O3. Films were characterized by X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), reflection high-energy electron diffraction (RHEED), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). The film/substrate epitaxial relationship can be written as CeO2(1 1 1)//α-Al2O3(0 0 0 1) and CeO2[1 1 0]//α-Al2O3[over(2, -) 1 1 0] . Ce and Sm were found to be in their highest oxidation state, +4 and +3, respectively. The doped cubic CeO2 films have a preferred (1 1 1) orientation. Significant conductivity difference was observed between single and polycrystalline films. A good orientation existing in the single-crystalline thin films may help long-range oxygen vacancy transport, ultimately contributing to significantly higher conductivities, in comparison to polycrystalline films.

Publication Date

5-1-2008

Publication Title

Journal of Crystal Growth

Volume

310

Issue

10

Number of Pages

2450-2456

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.jcrysgro.2007.12.028

Socpus ID

42249115329 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/42249115329

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