Title

Conductivity Of Oriented Samaria-Doped Ceria Thin Films Grown By Oxygen-Plasma-Assisted Molecular Beam Epitaxy

Abstract

We have used oxygen-plasma-assisted molecular beam epitaxy to grow highly oriented Ce1-x Smx O2-δ films on single-crystal c- Al2 O3. The samarium concentration x was varied in the range of 1-33 atom %. It was observed that dominant (111) orientation in Ce1-x Smx O2-δ films can be maintained up to about 10 atom % samarium concentration. Films higher than 10 atom % Sm concentration started to show polycrystalline features. The highest conductivity of 0.04 S cm-1 at 600°C was observed for films with ∼5 atom % Sm concentration. A loss of orientation, triggering an enhanced grain-boundary scattering, appears to be responsible for the decrease in conductivity at higher dopant concentrations. © 2008 The Electrochemical Society.

Publication Date

3-24-2008

Publication Title

Electrochemical and Solid-State Letters

Volume

11

Issue

5

Number of Pages

-

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1149/1.2890122

Socpus ID

40849085362 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/40849085362

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