Title
Characterization Of Transient Behavior And Failure Mechanism Of Polysilicon-Bound Diode Under Cdm-Like Very-Fast Transmission Line Pulsing
Abstract
Transient behaviors of poly-bound diode subject to fast ESD events such as the Charged Device Model (CDM) are characterized using pulses generated by the very-fast transmission line pulsing (VFTLP) tester. The effects of changing diode's dimension parameters on the overshoot voltage and turn-on time are studied. The correlation between the poly-bound diode failure and poly-gate configuration under the VFTLP stress is also investigated. © 2010 IEEE.
Publication Date
9-15-2010
Publication Title
Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Number of Pages
-
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/IPFA.2010.5532079
Copyright Status
Unknown
Socpus ID
77956437476 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/77956437476
STARS Citation
Li, You; Liou, Juin J.; and Liu, Wen, "Characterization Of Transient Behavior And Failure Mechanism Of Polysilicon-Bound Diode Under Cdm-Like Very-Fast Transmission Line Pulsing" (2010). Scopus Export 2010-2014. 1018.
https://stars.library.ucf.edu/scopus2010/1018