Title

Investigation Of Locos- And Polysilicon-Bound Diodes For Robust Electrostatic Discharge (Esd) Applications

Keywords

Diodes; Electrostatic discharge (ESD); Failure current; On-resistance

Abstract

In this paper, the current-carrying and voltage-clamping capabilities of LOCal Oxidation of Silicon (LOCOS)- and polysilicon-bound diodes are first investigated. Comparison of these capabilities leads to the conclusion that the polysilicon-bound diode is more suited for electrostatic discharge (ESD) protection applications. Then, to achieve an optimal diode structure for ESD applications, the effects of the cathode/anode length, cathode/anode width, polysilicon width, finger number, terminal connection, and metal layout on the polysilicon-bound diode's ESD robustness are studied and discussed in detail. © 2010 IEEE.

Publication Date

4-1-2010

Publication Title

IEEE Transactions on Electron Devices

Volume

57

Issue

4

Number of Pages

814-819

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TED.2009.2039964

Socpus ID

77950295860 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/77950295860

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