Title

Mbe-Grown NiYMg1-YO And ZnXMg 1-XO Thin Films For Deep Ultraviolet Optoelectronic Applications

Abstract

We report on the heteroepitaxial growth of high-quality single crystal cubic ZnxMg1-xO and NiyMg1-yO thin films by radio frequency oxygen plasma-assisted molecular beam epitaxy (RF- MBE). Film compositions over the ranges x = 0 to x = 0.65 and y = 0 to y = 1 have been grown on lattice-matched MgO (100) and characterized optically, morphologically, compositionally, and electrically. Both of these ternary materials are shown to have bandgaps which vary directly as a function of transition metal (Ni or Zn) concentration. Optical transmission measurements of NiyMg1-yO show the bandgap to shift continuously over the approximate range 3.5 eV (for NiO) to 4.81 eV (for y=0.075). Similarly, the bandgap of cubic ZnxMg1-xO is shifted from about 4.9 eV (for x = 0.65) to 6.25 eV (for x=0.12). Films exhibit good morphological quality and typical roughness of NiyMg1-yO films is 5 Å while that of ZnxMg1-xO is less than 15 Å, as measured by atomic force microscopy (AFM). X-ray diffraction (XRD) is employed to confirm crystal orientation and to determine the films' lattice constants. Film compositions are interrogated by Rutherford Backscattering (RBS) and electrical characterization is made by room-temperature Hall measurements. © 2010 Materials Research Society.

Publication Date

7-1-2010

Publication Title

Materials Research Society Symposium Proceedings

Volume

1201

Number of Pages

197-202

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

77954018390 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/77954018390

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