Title
Cubic ZnXMg1-XO Thin Films Grown By Plasma-Assisted Molecular-Beam Epitaxy For Optoelectronic Applications
Abstract
Heteroepitaxial ZnxMg1-xO thin films were grown on lattice-matched MgO (100) substrates using radiofrequency plasma-assisted molecular-beam epitaxy. High-quality epilayers with zinc concentrations ranging from x = 0 (MgO) to x = 0.65 were grown and characterized optically, structurally, and electrically. The ZnxMg1-xO films were found to maintain the rocksalt cubic (81) crystal structure for concentrations z <0.65, with a linear dependence of lattice constant on Zn concentration. X-ray diffraction (XRD) also revealed the emergence of phase segregation into wurtzite (54) phase for the highest concentration film. The band gap energy of the films was successfully varied from 4.9 to 6.2 eV (253-200 nm), showing a linear relationship with Zn concentration. The strictly cubic films exhibit roughness on the order of 10 Å and resistivities of approximately 10 6 ω.cm. © 2010 Materials Research Society.
Publication Date
6-1-2010
Publication Title
Journal of Materials Research
Volume
25
Issue
6
Number of Pages
1072-1079
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1557/jmr.2010.0150
Copyright Status
Unknown
Socpus ID
77958119683 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/77958119683
STARS Citation
Mares, J. W.; Boutwell, R. C.; Schemer, A.; and Schoenfeld, W. V., "Cubic ZnXMg1-XO Thin Films Grown By Plasma-Assisted Molecular-Beam Epitaxy For Optoelectronic Applications" (2010). Scopus Export 2010-2014. 829.
https://stars.library.ucf.edu/scopus2010/829