Title

Electro-Thermal Stress Effect On Ingap/Gaas Heterojunction Bipolar Low-Noise Amplifier Performance

Abstract

This paper investigates the electro-thermal stress-induced performance degradation of a cascode low-noise amplifier built using advanced InGaP/GaAs heterojunction bipolar transistors. Changes in device characteristics due to the electro-thermal stress are examined experimentally. SPICE Gummel-Poon model parameters extracted from the pre- and post-stress HBT measurement data are then used in Cadence SpectreRF simulator to study the impact of the electro-thermal stress on the InGaP/GaAs LNA's RF performance. © 2009 Elsevier Ltd. All rights reserved.

Publication Date

3-1-2010

Publication Title

Microelectronics Reliability

Volume

50

Issue

3

Number of Pages

365-369

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.microrel.2009.12.007

Socpus ID

76849086887 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/76849086887

This document is currently not available here.

Share

COinS