Title
Evaluation Of Nanowire Field-Effect Transistors For Electrostatic Discharge (Esd) Applications
Abstract
Electrostatic discharge robustness of promising nano-devices, the gate-all-around nanowire field-effect transistor and double-gated poly-Si nanowire thin-film transistor, were characterized and compared with FinFETs for the first time using the transmission line pulsing (TLP) technique. Failure analysis of the devices was done by electrical characterization and microscopy inspection. © 2010 IEEE.
Publication Date
9-15-2010
Publication Title
Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Number of Pages
-
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/IPFA.2010.5532007
Copyright Status
Unknown
Socpus ID
77956443817 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/77956443817
STARS Citation
Liu, Wen; Liou, Juin J.; Li, You; Chung, J.; and Jeong, Y. H., "Evaluation Of Nanowire Field-Effect Transistors For Electrostatic Discharge (Esd) Applications" (2010). Scopus Export 2010-2014. 1017.
https://stars.library.ucf.edu/scopus2010/1017