Title

Evaluation Of Lateral Power Mosfets In A Synchronous Buck Converter Using A Mixed-Mode Device And Circuit Simulation

Keywords

Body diode loss; buck converter; conduction loss; heavy ion radiation; hot electron; impact ionization; laterally double-diffused MOS (LDMOS); mixed-mode simulation; R DS(ON); reliability; switching loss

Abstract

This paper presents an evaluation of laterally double-diffused MOS transistors in synchronous dc-dc buck converters using a physical-based mixed device and circuit simulation. It is observed that impact ionization of the low-side transistor can be very high after the dead-time drain overshoot voltage point. In addition, heavy ion irradiation degrades power MOSFET performance and may lead to a potential circuit malfunction due to a significant increase in transient current if heavy ions strike the dc-dc buck converter at a critical time during switching. © 2011 IEEE.

Publication Date

11-1-2011

Publication Title

IEEE Transactions on Electron Devices

Volume

58

Issue

11

Number of Pages

4004-4010

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TED.2011.2166076

Socpus ID

80054951070 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/80054951070

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