Title

Nexfet Generation 2, New Way To Power

Abstract

In this paper, an integrated NexFET power module is presented to meet requirements on next-generation, high efficiency and high current density DC-DC converters for computer applications. The new power module uses an innovative stacked-die package technology, implements low V th power MOSFET in the low-side position, and introduces monolithically integrated components to avoid shoot-through and minimize voltage ringing at the switch node. In synchronous buck application, this power module achieves over 90% efficiency and low switch node ringing at high output current rating (25A) and high operation frequency (1MHz) under 12V input and 1.3V output condition. © 2011 IEEE.

Publication Date

12-1-2011

Publication Title

Technical Digest - International Electron Devices Meeting, IEDM

Number of Pages

-

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/IEDM.2011.6131615

Socpus ID

84863063184 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84863063184

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