Title
Nexfet Generation 2, New Way To Power
Abstract
In this paper, an integrated NexFET power module is presented to meet requirements on next-generation, high efficiency and high current density DC-DC converters for computer applications. The new power module uses an innovative stacked-die package technology, implements low V th power MOSFET in the low-side position, and introduces monolithically integrated components to avoid shoot-through and minimize voltage ringing at the switch node. In synchronous buck application, this power module achieves over 90% efficiency and low switch node ringing at high output current rating (25A) and high operation frequency (1MHz) under 12V input and 1.3V output condition. © 2011 IEEE.
Publication Date
12-1-2011
Publication Title
Technical Digest - International Electron Devices Meeting, IEDM
Number of Pages
-
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/IEDM.2011.6131615
Copyright Status
Unknown
Socpus ID
84863063184 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84863063184
STARS Citation
Yang, Boyi; Xu, Shuming; Korec, Jacek; Wang, Jun; and Lopez, Ozzie, "Nexfet Generation 2, New Way To Power" (2011). Scopus Export 2010-2014. 2183.
https://stars.library.ucf.edu/scopus2010/2183