Title

Comparison Of Au-In Transient Liquid Phase Bonding Designs For Sic Power Semiconductor Device Packaging

Keywords

High-Temperature; Packaging; Transient liquid phase (TLP) Bonding; Wide bandgap

Abstract

Transient liquid phase (TLP) bonding is an advanced die-attach technique for wide-bandgap power semiconductor and high-temperature packaging. TLP bonding advances current soldering techniques by raising the melting point to over 500 °C without detrimental high-lead materials. The bond also has greater reliability and rigidity due in part to a bonding temperature of 200 °C that drastically lowers the peak bond stresses. Furthermore, the thermal conductivity is increased 67 % while the bond thickness is substantially reduced, lowering the thermal resistance by an order of magnitude. This work provides an in-depth examination of the TLP fabrication methodology utilizing mechanical and thermal experimental characterization data along with thermal reliability results.

Publication Date

12-1-2011

Publication Title

Proceedings - 2011 IMAPS International Conference on High Temperature Electronics Network, HiTEN 2011

Number of Pages

77-83

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

84876949543 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84876949543

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