Title

Adaptive Gate Bias For Power Amplifier Temperature Compensation

Keywords

Bias circuit; hot electron; mixed-mode simulation; output power; power amplifier (PA); power-added efficiency; self-heating; temperature compensation

Abstract

Mixed-mode device and circuit simulation is used to examine device self-heating during power amplifier (PA) transient response. Lattice temperature increases with time and eventually saturates beyond the thermal time constant. Temperature variation on the effect of PA performances has been modeled and analyzed. Different gate biasing schemes that reduce the temperature drift of PA output power and power-added efficiency are evaluated. A simple adaptive gate bias technique effectively provides temperature compensation of PA performances over a wide range of temperatures. © 2010 IEEE.

Publication Date

9-1-2011

Publication Title

IEEE Transactions on Device and Materials Reliability

Volume

11

Issue

3

Number of Pages

442-449

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TDMR.2011.2160264

Socpus ID

80052610426 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/80052610426

This document is currently not available here.

Share

COinS