Title
Characterization And Failure Analysis Of Sub-10 Nm Diameter, Gate-All-Around Nanowire Field-Effect Transistors Subject To Electrostatic Discharge (Esd)
Keywords
electrostatic discharge (ESD); failure analysis; Nanowire field-effect transistor
Abstract
Electrostatic discharge (ESD) robustness of the Sub-10 nm diameter gate-all-around nanowire field-effect transistor (NW FET) was characterized and compared with sub 65nm MOS devices and FinFETs. Failure mechanisms of NW FETs subject to ESD stresses are investigated by DC current-voltage measurements carried out before and after stressing the devices with ESD equivalent pulses generated from the transmission line pulsing (TLP) tester. © 2011 IEEE.
Publication Date
9-26-2011
Publication Title
Proceedings - International NanoElectronics Conference, INEC
Number of Pages
-
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/INEC.2011.5991616
Copyright Status
Unknown
Socpus ID
80053010972 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/80053010972
STARS Citation
Liu, W.; Liou, J. J.; Singh, N.; Lo, G. Q.; and Chung, J., "Characterization And Failure Analysis Of Sub-10 Nm Diameter, Gate-All-Around Nanowire Field-Effect Transistors Subject To Electrostatic Discharge (Esd)" (2011). Scopus Export 2010-2014. 2881.
https://stars.library.ucf.edu/scopus2010/2881