Title

Reliability Analysis Of Mos Varactor In Cmos Lc Vco

Keywords

Channel hot electron (CHE); Oxide breakdown; Phase noise; Positive-bias temperature instability (PBTI); Reliability; Voltage-controlled oscillator (VCO)

Abstract

The paper investigates the reliability of MOS varactor tuned voltage-controlled oscillators (VCO). Due to the stress induced threshold voltage shift of the MOS varactor, the resonant tank degrades and the center frequency and phase noise of VCO deviate. The behavior is modeled and an adaptive body biasing scheme is proposed to make VCO resilient to reliability. In the mean time it does not degrade the VCO performance. An LC VCO at 24 GHz carrier frequency with adaptive body biasing is compared with VCO without such biasing design in PTM 65 nm technology. The ADS simulation results show that the biasing design helps improve the robustness of the VCO in resonant frequency. The design reduces the frequency sensitivity of VCO by 20% when subjected to threshold voltage degradation. © 2010 Elsevier Ltd.

Publication Date

2-1-2011

Publication Title

Microelectronics Journal

Volume

42

Issue

2

Number of Pages

330-333

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.mejo.2010.12.003

Socpus ID

79551482063 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/79551482063

This document is currently not available here.

Share

COinS