Title

Thermal Reliability Of Vco Using Ingap/Gaas Hbts

Abstract

Degradations of InGaP/GaAs heterojunction bipolar transistor (HBT) collector current and base current subjected to cumulative long-term junction temperature stress are examined experimentally. The aged SPICE model parameters as a function of stress time are extracted from the measurement data. The VCO phase noise, tuning range, and output amplitude are studied in circuit simulation. The phase noise increases, tuning range and output amplitude decrease with increasing junction temperature. © 2011 Elsevier Ltd. All rights reserved.

Publication Date

12-1-2011

Publication Title

Microelectronics Reliability

Volume

51

Issue

12

Number of Pages

2147-2152

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.microrel.2011.07.019

Socpus ID

81855161590 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/81855161590

This document is currently not available here.

Share

COinS