Title

Performance Of Trench Power Mosfet With Strained Si/Sige Multilayer Channel

Keywords

Breakdown voltage; compressive strain; gate charge; hot electrons; power metaloxidesemiconductor field-effect transistor (MOSFET); SiGe channel; specific on-resistance; tensile strain

Abstract

Strain engineering such as tensile-strained silicon on silicon germanium is widely used in complementary metaloxidesemiconductor (MOS) devices to enhance carrier mobility and can potentially reduce the specific on-resistance of trench power MOS field-effect transistors (MOSFETs). We report on the numerical study of a new trench power MOSFET structure with a strained p-type Si/SiGe superlatticelike channel region and of a process of fabricating the device. The stress distribution and the mobility enhancement inside the MOSFET structure are investigated. The breakdown voltage, the specific on-resistance, and the gate charge of the SiGe power MOSFET are evaluated. The new SiGe-channel power MOSFET exhibits a 12% reduction in the on-resistance while maintaining essentially the same blocking voltage and gate charge as the silicon trench power MOSFET. © 2010 IEEE.

Publication Date

5-1-2011

Publication Title

IEEE Transactions on Electron Devices

Volume

58

Issue

5

Number of Pages

1517-1522

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TED.2011.2121071

Socpus ID

79955542277 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/79955542277

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