Title
Electrostatic Discharge (Esd) Protection Of Rf Integrated Circuits
Abstract
Electrostatic discharge (ESD) induced failures continue to be a major reliability concern in the semiconductor industry. Such a concern will in fact be intensified as the CMOS technology is scaling toward the 22-nm and beyond. This paper covers the issues and challenges pertinent to the design of electrostatic discharge (ESD) protection solutions of CMOS-based RF integrated circuits. © 2012 IEEE.
Publication Date
12-1-2012
Publication Title
IEEE Asia-Pacific Conference on Circuits and Systems, Proceedings, APCCAS
Number of Pages
460-462
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/APCCAS.2012.6419071
Copyright Status
Unknown
Socpus ID
84874139038 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84874139038
STARS Citation
Liou, Juin J.; Jiang, Chang; and Chia, Feng, "Electrostatic Discharge (Esd) Protection Of Rf Integrated Circuits" (2012). Scopus Export 2010-2014. 3906.
https://stars.library.ucf.edu/scopus2010/3906