Title

Novel Electrostatic Discharge (Esd) Protection Solution In Gaas Phemt Technology

Abstract

This paper develops an effective electrostatic discharge (ESD) protection solution for GaAs-based integrated circuits based on a novel multi-gate pHEMT. With approximately the same layout area, the proposed ESD protection clamp can carry an ESD current three times higher than the conventional single-gate pHEMT clamp under the human body model (HBM) stress. Moreover, the new ESD clamp shows promising results when characterized under the charged device model (CDM) stress. The parasitic capacitance of the new ESD clamp is also measured to assess its suitability for high-frequency ESD applications. © 2012 IEEE.

Publication Date

11-19-2012

Publication Title

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Number of Pages

-

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/IPFA.2012.6306333

Socpus ID

84869049197 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84869049197

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