Title

Oxidation Of Single Crystal Silicon Nanowires

Abstract

Silicon nanowires (SiNWs) grown by electroless etching technique using HF/AgNO3 solution were subsequently oxidized. SiNWs grown by this method do not oxidize in the same manner as planar Si. The exposed areas for oxidation, being vertically-align SiNWs, cycle between (100) and (110) orientations, going around the SiNW. A result of this is that, since (100) and (110) oriented Silicon (Si) oxidize at different rates, the oxide growth will produce a "squarish" structure. ©The Electrochemical Society.

Publication Date

12-1-2012

Publication Title

ECS Transactions

Volume

41

Issue

34

Number of Pages

37-46

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1149/1.3697460

Socpus ID

84879354974 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84879354974

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